SLEEM Imaging of Doping Patterns in Semiconductors

0205406 - UPT-D 20010046 RIV IT eng C - Konferenční příspěvek (zahraniční konf.)
Müllerová, Ilona - Frank, Luděk - El Gomati, M. M.
SLEEM Imaging of Doping Patterns in Semiconductors.
Proceedings of 5th Multinational Congress on Electron Microscopy. Lecce: Rinton Press, 2001 - (Dini, L.; Catalano, M.), s. 317-318. ISBN 1-58949-003-7.
[MCEM '01 /5./ - Multinational Congress on Electron Microscopy. Lecce (IT), 20.09.2001-25.09.2001]
Grant CEP: GA AV ČR IAA1065901
Výzkumný záměr: CEZ:AV0Z2065902
Klíčová slova: UHV SEM * low energy range
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

P + doped patterns in n-type Si were observed in a UHV SEM equipped with the cathode lens, i.e. in the SLEEM mode. In the low energy range below 6 keV, p-type appeared brighter than n-type. The contrast reaches its maximum at 50 to 100 eV, which value fits that of the shortest penetration depth of electrons. This supports explanation based on influence of the internal field connected with the band bending caused by presence of the surface states.
Trvalý link: http://hdl.handle.net/11104/0101020