Imaging of semiconductor structures in environmental SEM

0205321 - UPT-D 20000100 RIV CZ eng J - Článek v odborném periodiku
Romanovský, Vladimír - Hutař, Otakar
Imaging of semiconductor structures in environmental SEM.
Jemná mechanika a optika. Roč. 45, č. 10 (2000), s. 274-275. ISSN 0447-6441
Grant CEP: GA AV ČR IBS2065017
Výzkumný záměr: CEZ:AV0Z2065902
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The charging effects are encountered very often when the semiconductor specimens are observed. There are several possibilities how to eliminate these undesirable phenomena. One of the newest methods how to suppress charging of specimens is environmental scanning electron microscopy (ESEM). Ionization of gas molecules caused by impacts of primary beam electrons and signal electrons in the close vicinity of the specimen surface removes the surface charge. The ionization detectors used in ESEM enable one to obtain similar information as in classical SEM.
Trvalý link: http://hdl.handle.net/11104/0100936