Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology

0205237 - UPT-D 20000013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Hutař, Otakar - Oral, Martin - Müllerová, Ilona - Romanovský, Vladimír
Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology.
Proceedings of the 12th European Congress on Electron Microscopy. Vol. 3. Brno: Czechoslovak Society for Electron Microscopy, 2000 - (Frank, L.; Ciampor, F.), s. I201-I202. ISBN 80-238-5503-4.
[EUREM /12./ - European Congress on Electron Microscopy. Brno (CZ), 09.07.2000-14.07.2000]
Grant CEP: GA AV ČR IBS2065017
Výzkumný záměr: CEZ:AV0Z2065902
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The low energy backscattered electron (BSE) detector, equipped with an electrostatic immersion lens for the retardation of the primary electron beam (PE) was elaborated and used for the imaging of surface semiconductor device specimens in a commercial SEM. Despite the signal of BSE is generally lower than that obtained using secondary electrons (SE), the achieved results predestine this BSE detection method as a suitable tool for the inspection of the fine structures of semiconductor devices and linewidth measurement of critical dimension (CD).
Trvalý link: http://hdl.handle.net/11104/0100855