Laser Photolysis of Trimethoxysilane: Chemical Vapour Deposition of Nanostructured Silicone Powders with Si-H and Si-OCH3 Bonds

0181629 - UFCH-W 20030033 RIV GB eng J - Článek v odborném periodiku
Tomovska, R. - Bastl, Zdeněk - Boháček, Jaroslav - Pola, Josef
Laser Photolysis of Trimethoxysilane: Chemical Vapour Deposition of Nanostructured Silicone Powders with Si-H and Si-OCH3 Bonds.
Applied Organometallic Chemistry. Roč. 17, č. 2 (2003), s. 113-119. ISSN 0268-2605. E-ISSN 1099-0739
Grant CEP: GA MŠMT OC 523.60
Výzkumný záměr: CEZ:AV0Z4032918; CEZ:AV0Z4040901
Klíčová slova: trimethoxysilane (TMOS) * laser photolysis * nanostructured silicone powder
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 1.414, rok: 2003

Gas-phase photolysis of trimethoxysilane, achieved for the first time by focused ArF laser radiation at 193 nm, yields C-1,C-2 hydrocarbons, methanol and carbon monoxide along with ultrafine nanostructured silicone powder possessing -SiO3 and SiO4 configurations and Si-H and Si-OCH3 bonds. The photolytic process, resulting in efficient removal of the methyl groups, is explained as a multitude of steps involving cleavages of all the available bonds.
Trvalý link: http://hdl.handle.net/11104/0078165