Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment

0181583 - UFCH-W 20030006 RIV NL eng J - Článek v odborném periodiku
Franzreb, K. - Williams, P. - Lörinčík, Jan - Šroubek, Zdeněk
Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment.
Applied Surface Science. 203-204, 1/4 (2003), s. 39-42. ISSN 0169-4332. E-ISSN 1873-5584
Výzkumný záměr: CEZ:AV0Z2067918; CEZ:AV0Z4040901
Klíčová slova: low-energy ion scattering * doubly charged ions * molecular orbital
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 1.284, rok: 2003

Abstract: Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O-2(+) bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O-2(+), versus O+. While the ratio of O-2(+) versus O+ drops significantly at reduced bombarding energies, O-2(+) back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O-2(+) ion formation in an asymmetric O-16 --> Si-28 collision is expected to take place via ''collisional double ionization'' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection.
Trvalý link: http://hdl.handle.net/11104/0001911