Synthesis of High Purity Si3N4 and SiC Powders by CVD Method

0162484 - UIACH-O 20033047 RIV SK eng J - Článek v odborném periodiku
Halamka, M. - Kavecký, Š. - Dočekal, Bohumil - Madejová, J. - Šajgalík, P.
Synthesis of High Purity Si3N4 and SiC Powders by CVD Method.
Ceramics - Silikáty. Roč. 47, č. 3 (2003), s. 88-93. ISSN 0862-5468. E-ISSN 1804-5847
Výzkumný záměr: CEZ:AV0Z4031919
Klíčová slova: high purity ceramics * trace element analysis * atomic absorption spectrometry
Kód oboru RIV: CB - Analytická chemie, separace
Impakt faktor: 0.449, rok: 2003

Fine, sub-micrometer, amorphous powders of SiC and Si3N4 have been prepared from SiH4 - NH3 and C2H2 - SiH4 gaseous systems respectively, in a tubular flow reactor. The particle size of powders prepared at 1373 K is in the range of 50 - 150 nm and 10 to 100 nm for Si3N4 and SiC, respectively. The content of metal impurities (Al, Cr, Cu and Fe) in the presented powders is one order of magnitude lower compared to the commercially available powders prepared by other methods.
Trvalý link: http://hdl.handle.net/11104/0001199