0134447 - FZU-D 20030347 RIV RU eng J - Článek v odborném periodiku
Moiseev, K. D. - Mikhailova, M. P. - Yakovlev, Yu. P. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
Semiconductors. Roč. 37, č. 10 (2003), s. 1185-1189. ISSN 1063-7826. E-ISSN 1090-6479
Grant ostatní: Russian Fondation for Basic Research(RU) 02-02-17633; GLADIS(XE) IST-2001-35178
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: GaInAsSb * InAs * electroluminescence * broken-gap * II type heterointerface * semimetal channel
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.643, rok: 2003

The radiative recombination at the broken-gap p-GaInAsSb/p-InAs type-II interface was investigated in the temperature range of 4-100K.Two electroluminescence bands at 0.37 eV and 0.40 eV were observed. The first EL maximum was ascribed to recombination of electrons from semimetal channel at the interface with holes on deep acceptor level at the interface. The second EL maximum is connecected with the recombination in bulk InAs.
Trvalý link: http://hdl.handle.net/11104/0032349