Počet záznamů: 1
Electronic states in Ga.sub.1-x./sub.Mn.sub.x./sub.As: Substitutional versus interstitial position of Mn
- 1.0134170 - FZU-D 20030062 RIV US eng J - Článek v odborném periodiku
Máca, František - Mašek, Jan
Electronic states in Ga1-xMnxAs: Substitutional versus interstitial position of Mn.
Physical Review. B. Roč. 65, č. 23 (2002), s. 235209-1 - 235209-6. ISSN 0163-1829
Grant CEP: GA MŠMT OC P3.80; GA AV ČR IAA1010214
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: electronic structure * diluted magnetic semiconductors * Mn
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.327, rok: 2002
The electronic structure of (Ga, Mn)As crystals with Mn is substitutional, interstitial, and both positions was calculated. It is shown that the interstitial Mn acts as a double donor and compensates the holes created by two Mn atoms in substitutional positions.
Trvalý link: http://hdl.handle.net/11104/0032094
Počet záznamů: 1