0133092 - FZU-D 20000455 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Šimeček, Tomislav - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Čapek, Pavel - Heime, K. - Behres, A. - Joullié, A. - Christol, P.
Mid-infrared semiconductor lasers.
ASDAM 2000. Conference proceedings. Danvers: IEEE, 2000 - (Osvald, J.; Haščík, Š.; Kuzmík, J.; Breza, J.), s. 105-108. ISBN 0-7803-5939-9.
[International EuroConference on Advanced Semiconductor Devices and Microsystems /3./ ASDAM 2000. Smolenice Castle (SK), 16.10.2000-18.10.2000]
Grant CEP: GA ČR GA102/99/0414
GRANT EU: European Commission(XE) BRPR970466 - ADMIRAL
Grant ostatní: European Community(XE) IC20-CT97-0007; European Community(XE) BE97-4155-ADMIRAL
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

For mid infrared semiconductor lasers the most important goal is to overcome the nonradiatiive recombination processes and to improve the important laser parameters, including temperature dependence of the threshold current, maximum attainable optical power, spectral purity and lifetime expectancy. Recently several new physical concepts have beenadopted.
Trvalý link: http://hdl.handle.net/11104/0031080