Investigation of the electronic properties, first and second harmonic generation for A(XIII)B(XV) zinc-blende semiconductors

0098074 - ÚVGZ 2008 RIV NL eng J - Článek v odborném periodiku
Reshak, Ali H
Investigation of the electronic properties, first and second harmonic generation for A(XIII)B(XV) zinc-blende semiconductors.
[Výzkum elektronických vlastností, prvního a druhého stupně sfaleritového polovodiče A(XIII)B(XV.]
Physica B-Condensed Matter. Roč. 395, 1-2 (2007), s. 143-150. ISSN 0921-4526. E-ISSN 1873-2135
Výzkumný záměr: CEZ:AV0Z60870520
Klíčová slova: BAND-STRUCTURE CALCULATION
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 0.751, rok: 2007

Linearized-augmented plane wave (FP-LAPW) method. The results for the band structure, density of states, and the frequency-dependent linear and nonlinear optical response are present here. Our calculations show that these compounds have similar electronic structures. The valence band maximum (VBM) is located around Gamma and the conduction band minimum (CBM) is located around X resulting in an indirect energy band gap. The energy band gap of these compounds decreases when P is replaced by As and As by Sb. This can be attributed to the increases in bandwidth of the conduction bands when moving from P to As to Sb in agreement with the experimental data and previous theoretical calculations. The linear and nonlinear optical spectra are analyzed and the origin of some of the peaks in the spectra is discussed in terms of the calculated electronic structure.

Představili jsme výsledky elektronických vlastností, prvního a druhého stupně směsi polovodiče AIP, AlAs, AlSb.
Trvalý link: http://hdl.handle.net/11104/0157075