Počet záznamů: 1

Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen

SYSNO ASEP	0498916
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen
Tvůrce(i)	Blechta, Václav (UFCH-W)_{RID, ORCID} Drogowska, Karolina (UFCH-W)_RID Valeš, Václav (UFCH-W)_{RID, ORCID} Kalbáč, Martin (UFCH-W)_{RID, ORCID}
Zdroj.dok.	Journal of Physical Chemistry C. - : American Chemical Society - ISSN 1932-7447 Roč. 122, č. 37 (2018), s. 21493-21499
Poč.str.	7 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	field-effect transistors ; chemical-vapor-deposition ; walled carbon nanotube ; doped graphene ; layer graphene ; grown graphene
Vědní obor RIV	CF - Fyzikální chemie a teoretická chemie
Obor OECD	Physical chemistry
CEP	GA18-20357S GA ČR - Grantová agentura ČR
	LTC18039 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
Institucionální podpora	UFCH-W - RVO:61388955
UT WOS	000445711100042
EID SCOPUS	85053787931
DOI	10.1021/acs.jpcc.8b06906
Anotace	Transport characteristics of graphene field-effect transistors were measured in situ in oxygen/nitrogen atmospheres and at various temperatures. Mobilities of holes were extracted from transport characteristics as well as the doping level depending on the time of graphene exposure to oxygen/nitrogen atmosphere. The hole mobility showed significant decrease upon the oxygen adsorption to low energy adsorption sites (sp(2) carbon). However, it remained unaffected by the oxygen adsorption to high-energy adsorption sites which are represented by defects, impurities, transfer residuals, edges, and functional groups on graphene. The Dirac point was upshifted for both the low- and high-energy adsorption events. Activation energy of oxygen adsorption/desorption was estimated from temperature-dependent desorption rate coefficients as 215 and 450 meV for the low- and high-energy adsorption sites, respectively.
Pracoviště	Ústav fyzikální chemie J.Heyrovského
Kontakt	Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
Rok sběru	2019

Počet záznamů: 1