Počet záznamů: 1
Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells
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SYSNO ASEP 0496195 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells Tvůrce(i) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAICelkový počet autorů 8 Zdroj.dok. Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 156-156Poč.str. 1 s. Akce International Symposium on Growth of III-Nitrides ISGN-7 Datum konání 05.08.2018 - 10.08.2018 Místo konání Warsaw Země PL - Polsko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. PL - Polsko Klíč. slova InGaN/GaN ; quantum wells ; scintillator ; low temperature buffer Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP LO1603 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 Anotace In our laboratory we prepare InGaN/GaN quantum wells (QWs) that should be used in scintillating structures with fast and strong luminescence response with short decay time. Unfortunately, in the photoluminescence (PL) spectrum there is also a slow broad defect band at around 470 nm besides the excitonic peak at around 420 nm. We assume that the main defect band contribution comes from the five lowest QWs that face the transition from higher growth temperature of GaN buffer to the lower growth temperature of InGaN QWs. SIMS data of selected samples prove the contamination under the lowest QWs and show that some elements are contaminating not only a thin region beneath QWs, but also the QWs themselves. We expect that the contamination is due to lowering the temperature which is a well-known phenomenon and thus we introduce a low temperature (LT) buffer under QWs. From PL spectra we can see that the sample with LT buffer has more intense excitonic peak and partly suppressed defect band.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2019
Počet záznamů: 1