Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

del Corro, Elena; Peňa-Álvarez, Miriam; Sato, K.; Morales-García, A.; Bouša, Milan; Mračko, Michal; Kolman, Radek; Pacáková, Barbara; Kavan, Ladislav; Kalbáč, Martin; Frank, Otakar

doi:https://dx.doi.org/10.1103/PhysRevB.95.085138

Počet záznamů: 1

Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

1.

SYSNO ASEP	0471907
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation
Tvůrce(i)	del Corro, Elena (UFCH-W) Peňa-Álvarez, Miriam (UFCH-W) Sato, K. (JP) Morales-García, A. (CZ) Bouša, Milan (UFCH-W)_{RID, ORCID} Mračko, Michal (UT-L) Kolman, Radek (UT-L)_RID Pacáková, Barbara (FZU-D)_{RID, ORCID} Kavan, Ladislav (UFCH-W)_{RID, ORCID} Kalbáč, Martin (UFCH-W)_{RID, ORCID} Frank, Otakar (UFCH-W)_{RID, ORCID}
Číslo článku	085138
Zdroj.dok.	Physical Review B. - : American Physical Society - ISSN 2469-9950 Roč. 95, č. 8 (2017)
Poč.str.	5 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	twisted bilayer graphene ; tuning ; silicon
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	GA14-15357S GA ČR - Grantová agentura ČR
	LL1301 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
	GA16-03823S GA ČR - Grantová agentura ČR
Institucionální podpora	UFCH-W - RVO:61388955 ; UT-L - RVO:61388998 ; FZU-D - RVO:68378271
UT WOS	000394661100004
EID SCOPUS	85014537505
DOI	10.1103/PhysRevB.95.085138
Anotace	Since the advent of graphene, tuning of its electronic structure has been one of the strongest focal points for many researchers. However, so far the vision of exploiting the unique properties of graphene for the replacement of silicon in electronics has been hampered by the inability to open a sizable band gap in a simple, controlled, and cost-effective manner [1]. For this purpose, bilayer graphene (BLG) holds more promise, for applications such as nanoelectronics, than monolayer graphene, as it offers several routes of profiting from the interactions between the two layers [2–4], e.g., by dual gating [4,5], molecular doping [6], or theoretically by mechanical deformation [7]. Similarly, the appealing concept of a bilayer pseudospin field effect transistor (BiSFET) still exists only at the theoretical level [3,8,9]. The interlayer distance could be one of the important parameters controlling the excitonic gap in BiSFET [10].
Pracoviště	Ústav fyzikální chemie J.Heyrovského
Kontakt	Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
Rok sběru	2018

Počet záznamů: 1