Počet záznamů: 1  

STRAIN ENGINEERING OF THE ELECTRONIC STRUCTURE OF 2D MATERIALS

  1. 1.
    SYSNO ASEP0468132
    Druh ASEPC - Konferenční příspěvek (mezinárodní konf.)
    Zařazení RIVD - Článek ve sborníku
    NázevSTRAIN ENGINEERING OF THE ELECTRONIC STRUCTURE OF 2D MATERIALS
    Tvůrce(i) del Corro, Elena (UFCH-W)
    Peňa-Alvarez, M. (ES)
    Morales-García, A. (CZ)
    Bouša, Milan (UFCH-W) RID, ORCID
    Řáhová, Jaroslava (UFCH-W)
    Kavan, Ladislav (UFCH-W) RID, ORCID
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Frank, Otakar (UFCH-W) RID, ORCID
    Zdroj.dok.NANOCON 2015: 7TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION. - Ostrava : Tanger Ltd; Czech Soc New Mat & Technologies; Reg Ctr Adv Technologies & Mat; Mat Res Soc Serbia; Norsk Materialteknisk Selskap, 2015 - ISBN 978-80-87294-63-5
    Rozsah strans. 19-24
    Poč.str.6 s.
    Forma vydáníTištěná - P
    AkceInternational Conference on Nanomaterials : Research and Application /7./
    Datum konání14.10.2015 - 16.10.2015
    Místo konáníBrno
    ZeměCZ - Česká republika
    Typ akceWRD
    Jazyk dok.eng - angličtina
    Země vyd.CZ - Česká republika
    Klíč. slova2D materials ; graphene ; electronic structure
    Vědní obor RIVCG - Elektrochemie
    CEPGA14-15357S GA ČR - Grantová agentura ČR
    Institucionální podporaUFCH-W - RVO:61388955
    UT WOS000374708800002
    AnotaceThe research on graphene has attracted much attention since its first successful preparation in 2004. It possesses many unique properties, such as an extreme stiffness and strength, high electron mobility, ballistic transport even at room temperature, superior thermal conductivity and many others. The affection for graphene was followed swiftly by a keen interest in other two dimensional materials like transition metal dichalcogenides. As has been predicted and in part proven experimentally, the electronic properties of these materials can be modified by various means. The most common ones include covalent or non-covalent chemistry, electrochemical, gate or atomic doping, or quantum confinement. None of these methods has proven universal enough in terms of the devices' characteristics or scalability. However, another approach is known mechanical strain/stress, but experiments in that direction are scarce, in spite of their high promises.
    The primary challenge consists in the understanding of the mechanical properties of 2D materials and in the ability to quantify the lattice deformation. Several techniques can be then used to apply strain to the specimens and thus to induce changes in their electronic structure. We will review their basic concepts and some of the examples so far documented experimentally and/or theoretically.
    PracovištěÚstav fyzikální chemie J.Heyrovského
    KontaktMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Rok sběru2017
Počet záznamů: 1  

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