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FeS.sub.2./sub. thin films deposition by reactive high power magnetron sputtering in Ar+H.sub.2./sub.S gas mixture
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SYSNO ASEP 0464298 Druh ASEP A - Abstrakt Zařazení RIV O - Ostatní Název FeS2 thin films deposition by reactive high power magnetron sputtering in Ar+H2S gas mixture Tvůrce(i) Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Čada, Martin (FZU-D) RID, ORCID, SAI
Kment, Štěpán (FZU-D) RID, ORCID
Olejníček, Jiří (FZU-D) RID, ORCIDZdroj.dok. International Conference on Plasma Surface Engineering. Abstracts. ( PSE 2016 ) /15./. - Braunschweig : European Joint Committee on Plasma and Ion Surface Engineering (EJC / PISE), 2016
S. 137-137Poč.str. 1 s. Forma vydání Online - E Akce International Conference on Plasma Surface Engineering ( PSE 2016 ) Datum konání 12.09.2016 - 16.09.2016 Místo konání Garmisch-Partenkirchen Země DE - Německo Typ akce WRD Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova sputtering ; HIPIMS ; films ; semiconductor ; deposition Vědní obor RIV BL - Fyzika plazmatu a výboje v plynech CEP TA03010743 GA TA ČR - Technologická agentura ČR Institucionální podpora FZU-D - RVO:68378271 Anotace Polycrystalline and nanocrystalline semiconducting iron pyrite FeS2 is recently an attractive material for optoelectronic and photonic applications. Due to its relatively large optical absorption coefficient in the visible region and narrow band gap of 0.95 ev this material can be suitable for applications in photovoltaics, photodetectors and photoelectrochemistry. Semiconducting polycrystalline and nanocrystalline FeS2 thin films were deposited by high power impulse magnetron reactive sputtering system (R-HIPIMS). The magnetron system with SmCo magnets and a pure circular iron target (diameter 50 mm) was used for the impulse reactive sputtering. The gas mixture of Ar and H2S was used for the reactive sputtering process. The partial pressure of H2S in the deposition plasma reactor was changed in a wide range. The substrate was heated during the deposition by an external furnace and the deposition temperature was controlled in the range 300-600 K. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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