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IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures
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SYSNO ASEP 0447032 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures Author(s) Křenek, Tomáš (UCHP-M)
Bezdička, Petr (UACH-T) SAI, RID, ORCID
Murafa, Nataliya (UACH-T) RID, SAI
Šubrt, Jan (UACH-T) SAI, RID
Pola, Josef (UCHP-M) RID, ORCID, SAIISBN 978-80-87294-53-6 Source Title NANOCON 2014, 6th International Conference. - Ostrava : Tanger Ltd, 2015 - ISBN 978-80-87294-53-6 Pages s. 268-273 Number of pages 6 s. Publication form Print - P Action NANOCON International Conference /6./ Event date 05.11.2014-07.11.2014 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords IR laser ; thermal decomposition ; Ge/Si/Sn nanoalloys Subject RIV CA - Inorganic Chemistry Subject RIV - cooperation Institute of Inorganic Chemistry Institutional support UCHP-M - RVO:67985858 ; UACH-T - RVO:61388980 UT WOS 000350636300045 Annotation Nowadays, great attention is devoted to Ge-Si-Sn ternary system, because Si1-x-yGexSny provides the potential of band gap engineering and tuning of the optical properties. IR laser irradiation of equimolar gaseous GeH4 + SiH4 + SnH4 + Ar mixture results in simultaneous decomposition of all three compounds and it allows deposition of nanostructured solid film. Analysis of the films by FTIR and Raman spectroscopy, X-ray diffraction analysis and electron microscopy revealed crystalline nanobodies of pure beta-Sn and crystalline nanoobjects of Ge1-x-ySixSny embedded in an amorphous metastable Ge-Si-Sn alloy. This process allows co-decomposition of all silicon, germanium and tin hydrides which is caused by combination of infrared multiple photon dissociation of absorbing silane and currently proceeding LIDB. This is followed by intermixing/clustering of extruded metal atoms in the gas phase. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2016
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