IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures

0447032 - ÚCHP 2016 RIV CZ eng C - Conference Paper (international conference)
Křenek, Tomáš - Bezdička, Petr - Murafa, Nataliya - Šubrt, Jan - Pola, Josef
IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures.
978-80-87294-53-6. In: NANOCON 2014, 6th International Conference. Ostrava: Tanger Ltd, 2015, s. 268-273. ISBN 978-80-87294-53-6.
[NANOCON International Conference /6./. Brno (CZ), 05.11.2014-07.11.2014]
Institutional support: RVO:67985858 ; RVO:61388980
Keywords : IR laser * thermal decomposition * Ge/Si/Sn nanoalloys
Subject RIV: CA - Inorganic Chemistry

Nowadays, great attention is devoted to Ge-Si-Sn ternary system, because Si1-x-yGexSny provides the potential of band gap engineering and tuning of the optical properties. IR laser irradiation of equimolar gaseous GeH4 + SiH4 + SnH4 + Ar mixture results in simultaneous decomposition of all three compounds and it allows deposition of nanostructured solid film. Analysis of the films by FTIR and Raman spectroscopy, X-ray diffraction analysis and electron microscopy revealed crystalline nanobodies of pure beta-Sn and crystalline nanoobjects of Ge1-x-ySixSny embedded in an amorphous metastable Ge-Si-Sn alloy. This process allows co-decomposition of all silicon, germanium and tin hydrides which is caused by combination of infrared multiple photon dissociation of absorbing silane and currently proceeding LIDB. This is followed by intermixing/clustering of extruded metal atoms in the gas phase.
Permanent Link: http://hdl.handle.net/11104/0248982