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LPE growth and scintillation properties of (Zn,Mg)O single crystalline film

SYSNO ASEP	0385543
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	LPE growth and scintillation properties of (Zn,Mg)O single crystalline film
Author(s)	Yoshikawa, A. (JP) Yanagida, T. (JP) Fujimoto, Y. (JP) Kurosawa, S. (JP) Yokota, Y. (JP) Yamaji, A. (JP) Sugiyama, M. (JP) Wakahara, S. (JP) Futami, Y. (JP) Kikuchi, M. (JP) Miyamoto, M. (JP) Sekiwa, H. (JP) Nikl, Martin (FZU-D)_{RID, ORCID, SAI}
Source Title	IEEE Transactions on Nuclear Science. - : Institute of Electrical and Electronics Engineers - ISSN 0018-9499 Roč. 59, č. 5 (2012), 2286-2289
Number of pages	4 s.
Language	eng - English
Country	US - United States
Keywords	crystalline materials ; epitaxial layers ; liquid phase epitaxy ; scintillator ; semiconductor films
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LH12150 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000310143300048
DOI	10.1109/TNS.2012.2194743
Annotation	Single crystalline films (Zn,Mg)O were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2013

Number of the records: 1