Number of the records: 1
LPE growth and scintillation properties of (Zn,Mg)O single crystalline film
- 1.0385543 - FZÚ 2013 RIV US eng J - Journal Article
Yoshikawa, A. - Yanagida, T. - Fujimoto, Y. - Kurosawa, S. - Yokota, Y. - Yamaji, A. - Sugiyama, M. - Wakahara, S. - Futami, Y. - Kikuchi, M. - Miyamoto, M. - Sekiwa, H. - Nikl, Martin
LPE growth and scintillation properties of (Zn,Mg)O single crystalline film.
IEEE Transactions on Nuclear Science. Roč. 59, č. 5 (2012), 2286-2289. ISSN 0018-9499. E-ISSN 1558-1578
R&D Projects: GA MŠMT LH12150
Institutional research plan: CEZ:AV0Z10100521
Keywords : crystalline materials * epitaxial layers * liquid phase epitaxy * scintillator * semiconductor films
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.219, year: 2012
Single crystalline films (Zn,Mg)O were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.
Permanent Link: http://hdl.handle.net/11104/0214744
Number of the records: 1