Number of the records: 1
Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P
SYS 0303478 LBL 02695nam^^2200361^^^450 005 20240103180908.4 101 0-
$a eng 102 $a CN 200 1-
$a Temperature dependence of electron hall concetration in n-type InP and n-type In0.5Ga0.5P 210 $a Beijing $c [Institute of Semiconductors, Chinese Academy of Sciences] $d 1999 215 $a 7 s. 463 -1
$1 200 1 $a Proceedings The Second Chinese-Czech Symposium Advenced Materials and Devices for Optoelectronics $v s. 52-58 $1 702 1 $a Yu $b J. $4 340 610 1-
$a III-V semiconductors 610 1-
$a Hall effect 700 -1
$3 cav_un_auth*0101770 $a Žďánský $b Karel $9 x $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0101728 $a Procházková $b Olga $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0101713 $a Nohavica $b Dušan $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i.
Number of the records: 1