Number of the records: 1
Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P
- 1.0303478 - URE-Y 990162 RIV CN eng C - Conference Paper (international conference)
Žďánský, Karel - Procházková, Olga - Nohavica, Dušan
Temperature dependence of electron hall concetration in n-type InP and n-type In0.5Ga0.5P.
Beijing: [Institute of Semiconductors, Chinese Academy of Sciences], 1999. In: Proceedings The Second Chinese-Czech Symposium Advenced Materials and Devices for Optoelectronics. - (Yu, J.), s. 52-58
[Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing (CN), 13.09.1999-14.09.1999]
R&D Projects: GA ČR GA102/99/0341
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113693
Number of the records: 1