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Diode Laser Spectroscopy Using Two Modes of an InAsSb/InAsSbP Laser near 3.6 ćm
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SYSNO ASEP 0181026 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Diode Laser Spectroscopy Using Two Modes of an InAsSb/InAsSbP Laser near 3.6 ćm Author(s) Civiš, Svatopluk (UFCH-W) RID, ORCID, SAI
Imenkov, A. N. (RU)
Danilova, A. P. (RU)
Kolchanova, N. M. (RU)
Sherstnev, V. V. (RU)
Yakovlev, Yu. P. (RU)
Walters, A. D. (FR)Source Title Applied Physics B-Lasers and Optics. - : Springer - ISSN 0946-2171
Roč. 71, - (2000), s. 481-485Language eng - English Country DE - Germany Keywords semiconductor laser ; spectroscopy ; InAsSb/InAsSbP Subject RIV CF - Physical ; Theoretical Chemistry CF - Physical ; Theoretical Chemistry R&D Projects IAA4040708 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z4040901 - UFCH-W A54/98:Z4-040-9-ii Annotation A new type of multimode semiconductor laser, based on InAsSb/InAsSbP heterostructures, is described. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2001
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