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Diode Laser Spectroscopy Using Two Modes of an InAsSb/InAsSbP Laser near 3.6 ćm

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    0181026 - UFCH-W 20000293 RIV DE eng J - Journal Article
    Civiš, Svatopluk - Imenkov, A. N. - Danilova, A. P. - Kolchanova, N. M. - Sherstnev, V. V. - Yakovlev, Yu. P. - Walters, A. D.
    Diode Laser Spectroscopy Using Two Modes of an InAsSb/InAsSbP Laser near 3.6 ćm.
    Applied Physics B-Lasers and Optics. Roč. 71, - (2000), s. 481-485. ISSN 0946-2171. E-ISSN 1432-0649
    R&D Projects: GA AV ČR IAA4040708
    Institutional research plan: CEZ:AV0Z4040901; CEZ:A54/98:Z4-040-9-ii
    Keywords : semiconductor laser * spectroscopy * InAsSb/InAsSbP
    Subject RIV: CF - Physical ; Theoretical Chemistry
    Impact factor: 1.913, year: 2000

    A new type of multimode semiconductor laser, based on InAsSb/InAsSbP heterostructures, is described.
    Permanent Link: http://hdl.handle.net/11104/0077634

     
     

Number of the records: 1  

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