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Amorphous silicon diodes with integrated nanoparticles
- 1.0502238 - FZÚ 2019 CZ eng A - Abstract
Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Amorphous silicon diodes with integrated nanoparticles.
17th Joint Vacuum Conference - Book of abstracts. Praha: Czech Vacuum Society, 2018 - (Mašek, K.; Jungwirthová, I.; Drbohlav, J.). s. 104-104
[Joint Vacuum Conference /17./. 10.09.2018-14.09.2018, Olomouc]
R&D Projects: GA MŠMT(CZ) LTC17029
Institutional support: RVO:68378271
Keywords : a-Si:H * PIN diode * thin films * nanoparticles
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Final diode structures glass/TCO/PIN/metal, with transparent conductive oxide and metals as contacts and NPs embedded in the intrinsic layer (I) of p-type (P) / intrinsic (I) / n-type silicon structure, were characterized by measurement of I-V characteristics and electroluminescence spectroscopy. Those thin films and structures possessed enhanced optical absorption coefficient in near infrared spectral range with possible applications as solar cell elements with very thin final thicknesses.
Permanent Link: http://hdl.handle.net/11104/0294180
Number of the records: 1