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GaN:Co epitaxial layers grown by MOVPE
- 1.0456264 - FZÚ 2016 RIV NL eng J - Journal Article
Šimek, P. - Sedmidubský, D. - Klímová, K. - Mikulics, M. - Maryško, Miroslav - Veselý, M. - Jurek, Karel - Sofer, Z.
GaN:Co epitaxial layers grown by MOVPE.
Journal of Crystal Growth. Roč. 44, Mar (2015), 62-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-20507S
Institutional support: RVO:68378271
Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.462, year: 2015
We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates.The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor.Three parameters,the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase,influencing cobalt concentration were investigated.The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co.ThemagneticpropertiesofGaN:Co thin films were investigated using superconducting quantum interference device magnetometer.In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy.
Permanent Link: http://hdl.handle.net/11104/0256820
Number of the records: 1