Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors

0420780 - FZÚ 2014 RIV US eng J - Journal Article
Jirásek, Vít - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Vanko, G.
Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors.
Advanced Science, Engineering and Medicine. Roč. 5, č. 6 (2013), s. 522-526. ISSN 2164-6627
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271
Keywords : nano-crystalline diamond * gallium nitride * HEMT * selective diamond growth
Subject RIV: BM - Solid Matter Physics ; Magnetism

A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) the continuous diamond film deposition followed by selective etching, and (b) the selective growth of patterned diamond films. The simulation results of structure of these two types of samples were compared.
Permanent Link: http://hdl.handle.net/11104/0227254