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Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy
- 1.0372226 - FZÚ 2012 RIV DE eng J - Journal Article
Ledinský, Martin - Fejfar, Antonín - Vetushka, Aliaksi - Stuchlík, Jiří - Rezek, Bohuslav - Kočka, Jan
Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy.
Physica Status Solidi. Roč. 5, 10-11 (2011), s. 373-375. ISSN 1862-6254. E-ISSN 1862-6270
R&D Projects: GA MŠMT(CZ) LC06040; GA MŠMT(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠMT LC510
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional research plan: CEZ:AV0Z10100521
Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.218, year: 2011
Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon (µc-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100× enhanced the current flows through the photosensitive µc-Si:H layer. The local current map and current–voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent.
Permanent Link: http://hdl.handle.net/11104/0205592
Number of the records: 1