Constitutive equation of the dipole layer in hydrogen-sensing metal-oxide-semiconductor structures

0356263 - ÚFE 2012 RIV US eng C - Conference Paper (international conference)
Šrobár, Fedor - Procházková, Olga
Constitutive equation of the dipole layer in hydrogen-sensing metal-oxide-semiconductor structures.
Conference Proceedings ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.), s. 275-278. ISBN 978-1-4244-8574-1.
[ASDAM 2010 - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice (SK), 25.10.2010-27.10.2010]
R&D Projects: GA ČR GA102/09/1037
Institutional research plan: CEZ:AV0Z20670512
Keywords : Chemical sensors * Interface phenomena * Semiconductor devices
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Constitutive P – E (dielectric polarization versus external electric field intensity) equation of the dipole ensemble in MOS-based hydrogen sensors is derived supposing Langmuir-type hydrogen absorption and a two-valley model of the elementary dipole energy. Depending on the energy difference of the minima, the P – E isotherms exhibit a rather sudden flip of the dipole orientation from antiparallel to parallel with respect to the E vector. Rabi resonance experiments could be based on this phenomenon.
Permanent Link: http://hdl.handle.net/11104/0194831