Number of the records: 1  

Crystallinity of the mixed phase silicon thin films by Raman spectroscopy

  1. 1.
    0341950 - FZÚ 2010 RIV NL eng J - Journal Article
    Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Mates, Tomáš - Fejfar, Antonín - Kočka, Jan - Štepánek, J.
    Crystallinity of the mixed phase silicon thin films by Raman spectroscopy.
    [Krystalinita tenké vrstvy křemíku určená Ramanovou spektroskopií.]
    Journal of Non-Crystalline Solids. Roč. 354, 19-25 (2008), s. 2253-2257. ISSN 0022-3093. E-ISSN 1873-4812
    R&D Projects: GA MŽP(CZ) SN/3/172/05
    Keywords : silicon * Raman scattering * chemical vapor deposition * Atomic force and scanning tunneling microscopy * Raman spectroscopy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.449, year: 2008

    Raman spectra of the mixed phase silicon films were studied. The 785 nm excitation was found optimal for crystallinity evaluation.

    Studovali jsme Ramanova spektra směsní fází křemíku. Pro určení jejich krystalinity je optimální excitování spekter při 785 nm.
    Permanent Link: http://hdl.handle.net/11104/0184789

     
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.