0306889 - FZÚ 2008 RIV CH eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Atef, M. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance.
[Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí.]
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 147, - (2008), s. 175-178. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA AV ČR IAA100100719; GA AV ČR KJB101630601; GA ČR GA202/06/0718
Institutional research plan: CEZ:AV0Z10100521
Keywords : optical properties * MOVPE * indium arsenide * gallium arsenide * quantum dots
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0159792