Particle detectors based on semiconducting InP epitaxial layers

0368041 - ÚFE 2012 RIV GB eng J - Článek v odborném periodiku
Yatskiv, Roman - Grym, Jan - Žďánský, Karel
Particle detectors based on semiconducting InP epitaxial layers.
Journal of Instrumentation. Roč. 6, C01072 (2011), C010721-C010725. ISSN 1748-0221. E-ISSN 1748-0221
Grant CEP: GA AV ČR KJB200670901; GA MŠMT(CZ) OC10021; GA ČR(CZ) GP102/08/P617
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: Solid state detectors * Gamma detectors * Radiation-hard detectors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.869, rok: 2011

In this work, we present study of electrical properties and detection performance of two types of InP detector structures: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.
Trvalý link: http://hdl.handle.net/11104/0202512