Počet záznamů: 1

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

  1. 1.
    0368040 - URE-Y 2012 RIV US eng J - Článek v odborném periodiku
    Žďánský, Karel
    Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles.
    Nanoscale Research Letters. Roč. 6, č. 490 (2011), s. 4901-49010 ISSN 1931-7573
    Grant CEP: GA MŠk(CZ) OC10021
    Výzkumný záměr: CEZ:AV0Z20670512
    Klíčová slova: semiconductor devices * nanostructures * sensors
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Impakt faktor: 2.726, rok: 2011

    Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.
    Trvalý link: http://hdl.handle.net/11104/0202511