Počet záznamů: 1

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands

  1. 1.
    0367915 - FZU-D 2012 RIV US eng J - Článek v odborném periodiku
    Hazdra, P. - Oswald, Jiří - Komarnitskyy, V. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
    Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands.
    Journal of Nanoscience and Nanotechnology. Roč. 11, č. 8 (2011), s. 6804-6809 ISSN 1533-4880
    Grant CEP: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: quantum dots * MOVPE * InAs * GaAs * photoluminescence * electroluminescence
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.563, rok: 2011

    The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 μm. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 μm) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strain reducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots.
    Trvalý link: http://hdl.handle.net/11104/0202422