Počet záznamů: 1

GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

  1. 1.
    0367155 - FZU-D 2012 RIV PL eng C - Konferenční příspěvek (zahraniční konf.)
    Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard - Hazdra, P.
    GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission.
    EWMOVPE XIV. Wroclaw: Printing house of Wroclaw University of Technology, 2011 - (Prazmowska, J.), s. 105-108. ISBN 978-83-7493-599-9.
    [European Workshop on Metalorganic Vapor Phase Epitaxy /14./. Wrocław (PL), 05.06.2011-08.06.2011]
    Grant CEP: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: quantum dot * InAs * GaAs * GaAsSb strain reducing layer * photoluminescence
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

    In this work we report the photoluminescence (PL) at maximum wavelength 1391 nm on MOVPE prepared InAs/GaAs quantum dots (QDs) with GaAsSb strain reducing layer (SRL) maintaining the type I heterojunction between QDs and GaAsSb SRL. We present the shift of PL maximum towards longer wavelengths with increasing Sb content in SRL. This type of structure increases strongly PL efficiency, redshifts the PL peak, decreases its full width at half maximum and maintains a similar energy separation between the ground state and excited state in comparison to QDs covered only by GaAs. These properties are promising for the use of GaAsSb SRL in QD devices.
    Trvalý link: http://hdl.handle.net/11104/0006666