Počet záznamů: 1

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

  1. 1.
    0364316 - FZU-D 2012 RIV US eng J - Článek v odborném periodiku
    Kopecký, Miloš - Kub, Jiří - Máca, František - Mašek, Jan - Pacherová, Oliva - Rushforth, A.W. - Gallagher, B. L. - Campion, R. P. - Novák, Vít - Jungwirth, Tomáš
    Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P).
    Physical Review. B. Roč. 83, č. 23 (2011), , "235324-1"-"235324-7" ISSN 1098-0121
    Grant CEP: GA AV ČR IAA100100912; GA MŠk(CZ) 7E08087
    GRANT EU: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
    Výzkumný záměr: CEZ:AV0Z10100520; CEZ:AV0Z10100521
    Klíčová slova: ferrmagnetic semiconductor * crystal structure * magnetic anisotropy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.691, rok: 2011
    http://prb.aps.org/abstract/PRB/v83/i23/e235324

    We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes.
    Trvalý link: http://hdl.handle.net/11104/0199834