Počet záznamů: 1

Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

  1. 1.
    0361428 - FZU-D 2013 RIV NL eng J - Článek v odborném periodiku
    Hara, K. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela
    Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S83"-"S89" ISSN 0168-9002
    Grant CEP: GA MŠk LA08032
    Výzkumný záměr: CEZ:AV0Z10100502
    Klíčová slova: p-bulk silicon * microstrip * charge collection * radiation damage
    Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
    Impakt faktor: 1.207, rok: 2011
    http://dx.doi.org/10.1016/j.nima.2010.04.090

    We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
    Trvalý link: http://hdl.handle.net/11104/0198740