Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

0361427 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Lindgren, S. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela … celkem 73 autorů
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S111"-"S117". ISSN 0168-9002. E-ISSN 1872-9576
Grant CEP: GA MŠMT LA08032
Výzkumný záměr: CEZ:AV0Z10100502
Klíčová slova: p-bulk silicon * surface damage * charge collection * punch-through voltage
Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
Impakt faktor: 1.207, rok: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.094

We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ~1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal.
Trvalý link: http://hdl.handle.net/11104/0198739