Počet záznamů: 1

Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

  1. 1.
    0361427 - FZU-D 2013 RIV NL eng J - Článek v odborném periodiku
    Lindgren, S. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela
    Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S111"-"S117" ISSN 0168-9002
    Grant CEP: GA MŠk LA08032
    Výzkumný záměr: CEZ:AV0Z10100502
    Klíčová slova: p-bulk silicon * surface damage * charge collection * punch-through voltage
    Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
    Impakt faktor: 1.207, rok: 2011
    http://dx.doi.org/10.1016/j.nima.2010.04.094

    We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ~1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal.
    Trvalý link: http://hdl.handle.net/11104/0198739