Počet záznamů: 1

Effect of nitrogen doping on TiO.sub.x./sub.N.sub.y./sub. thin film formation at reactive high-power pulsed magnetron sputtering

  1. 1.
    0358730 - FZU-D 2012 RIV GB eng J - Článek v odborném periodiku
    Straňák, Vítězslav - Quaas, M. - Bogdanowicz, R. - Steffen, H. - Wulff, H. - Hubička, Zdeněk - Tichý, M. - Hippler, R.
    Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering.
    Journal of Physics D-Applied Physics. Roč. 43, č. 28 (2010), s. 1-7 ISSN 0022-3727
    Grant CEP: GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002
    Grant ostatní: AVČR(CZ) M100100915
    Výzkumný záměr: CEZ:AV0Z10100522
    Klíčová slova: magnetron sputtering * TiO2 * pulse discharge * XRD * band gap
    Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
    Impakt faktor: 2.105, rok: 2010

    The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the TiO lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed TiN bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current.
    Trvalý link: http://hdl.handle.net/11104/0196679