Počet záznamů: 1

Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers

  1. 1.
    0357219 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Ha, N.N. - Dohnalová, Kateřina - Gregorkiewicz, T. - Valenta, J.
    Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers.
    Physical Review. B. Roč. 81, č. 19 (2010), 195206/1-195206/6 ISSN 1098-0121
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: optical parametric oscillators * nonlinear waveguides * laser materials * nonlinear optical crystals
    Kód oboru RIV: BH - Optika, masery a lasery
    Impakt faktor: 3.772, rok: 2010

    We present investigations of the optical gain cross section of 1.54 μm Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 μeV) emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission.
    Trvalý link: http://hdl.handle.net/11104/0195542