Počet záznamů: 1

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

  1. 1.
    0357129 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Mašek, Jan - Máca, František - Kudrnovský, Josef - Makarovský, O. - Eaves, L. - Campion, R. P. - Edmonds, K. W. - Rushforth, A.W. - Foxon, C. T. - Gallagher, B. L. - Novák, Vít - Sinova, Jairo - Jungwirth, Tomáš
    Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As.
    Physical Review Letters. Roč. 105, č. 22 (2010), 227202/1-227202/4 ISSN 0031-9007
    Grant CEP: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652
    GRANT EU: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
    Výzkumný záměr: CEZ:AV0Z10100520
    Klíčová slova: gallium arsenide * semiconductors
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 7.621, rok: 2010

    We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parametrization and the full potential local-density approximation+U calculations give a very similar band structure whose microscopic spectral character is consistent with the physical premise of the k·p kinetic-exchange model.
    Trvalý link: http://hdl.handle.net/11104/0195468