Počet záznamů: 1

Constitutive equation of the dipole layer in hydrogen-sensing metal-oxide-semiconductor structures

  1. 1.
    0356263 - URE-Y 2012 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
    Šrobár, Fedor - Procházková, Olga
    Constitutive equation of the dipole layer in hydrogen-sensing metal-oxide-semiconductor structures.
    Conference Proceedings ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.), s. 275-278. ISBN 978-1-4244-8574-1.
    [ASDAM 2010 - The Eighth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice (SK), 25.10.2010-27.10.2010]
    Grant CEP: GA ČR GA102/09/1037
    Výzkumný záměr: CEZ:AV0Z20670512
    Klíčová slova: Chemical sensors * Interface phenomena * Semiconductor devices
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

    Constitutive P – E (dielectric polarization versus external electric field intensity) equation of the dipole ensemble in MOS-based hydrogen sensors is derived supposing Langmuir-type hydrogen absorption and a two-valley model of the elementary dipole energy. Depending on the energy difference of the minima, the P – E isotherms exhibit a rather sudden flip of the dipole orientation from antiparallel to parallel with respect to the E vector. Rabi resonance experiments could be based on this phenomenon.
    Trvalý link: http://hdl.handle.net/11104/0194831