Počet záznamů: 1

Stabilization of semiconductor surface reconstructions by configurational entropy

  1. 1.
    0353804 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Romanyuk, Olexandr - Grosse, F. - Proessdorf, A. - Braun, W. - Riechert, H.
    Stabilization of semiconductor surface reconstructions by configurational entropy.
    Physical Review. B. Roč. 82, č. 12 (2010), 125315/1-125315/5 ISSN 1098-0121
    Grant CEP: GA ČR GA202/07/0601; GA ČR GPP204/10/P028
    Grant ostatní:AV CR - DFG bilateral(DE) 436 TSE 113/62/0-1
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: GaSb * surface reconstruction * DFT * entropy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.772, rok: 2010

    Surface unit cells with a larger area and a reduced symmetry have a larger configurational entropy. The entropy may even stabilize reconstructions with higher energy at finite temperatures. We study the entropy contribution to surface reconstructions on the basis of ground-state calculations employing density-functional theory. Specifically, the ground-state GaSb(111)A surface reconstruction has a (2×2) symmetry, but at elevated temperatures, we experimentally observe the (2√3×2√3)-R30° symmetry in agreement with the theoretical results. The findings based on the general expressions are consistent with experimental data from other semiconductor surfaces.
    Trvalý link: http://hdl.handle.net/11104/0192946