Počet záznamů: 1

Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy

  1. 1.
    0353507 - FZU-D 2011 RIV GB eng J - Článek v odborném periodiku
    Kučera, M. - Nitsch, Karel - Nikl, Martin - Hanuš, M.
    Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy.
    Radiation Measurements. Roč. 45, 3-6 (2010), s. 449-452 ISSN 1350-4487
    Grant CEP: GA AV ČR KAN300100802; GA ČR GA202/08/0893
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: YAG * LuAG * Ce-doping garnet * liquid phase epitaxy * luminescence
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.019, rok: 2010

    Epitaxial Lu3Al5O12 (LuAG) and Y3Al5O12 (YAG) garnet layers doped by Ce ions were grown by the liquid phase epitaxy. The effect of the flux composition, growth conditions, and substrate polishing on the layer morphology, creation of defects, and on optical and emission properties of layers was studied. The defects typical of the epitaxial growth are discussed.
    Trvalý link: http://hdl.handle.net/11104/0192745