Počet záznamů: 1

The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

  1. 1.
    0352722 - FZU-D 2011 RIV GB eng J - Článek v odborném periodiku
    Červenka, Jiří - Ledinský, Martin - Stuchlík, Jiří - Stuchlíková, The-Ha - Bakardjieva, Snejana - Hruška, Karel - Fejfar, Antonín - Kočka, Jan
    The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition.
    Nanotechnology. Roč. 21, č. 41 (2010), 415604/1-415604/7 ISSN 0957-4484
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510
    GRANT EU: European Commission(XE) 240826 - PolySiMode
    Výzkumný záměr: CEZ:AV0Z10100521; CEZ:AV0Z40320502
    Klíčová slova: nanoneedles * nanowires * silicon * plasma * chemical vapor deposition * crystal structure * growth * phonon * SEM * Raman
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.644, rok: 2010

    Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
    Trvalý link: http://hdl.handle.net/11104/0192169