Počet záznamů: 1

Mapping of Dopants in Silicon by Injection of Electrons

  1. 1.
    0352508 - UPT-D 2011 RIV JP eng C - Konferenční příspěvek (zahraniční konf.)
    Hovorka, Miloš - Frank, Luděk
    Mapping of Dopants in Silicon by Injection of Electrons.
    Proceedings of 5th Japan-China-Norway Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology. Toyama: University of Toyama, 2010, s. 15-18. ISBN 978-4-9903248-2-7.
    [JCNCS2010 /5./ Japan-China-Norway Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology. Toyama (JP), 12.09.2010-15.09.2010]
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: semiconductors * dopant contrast * very low energy SEM
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

    Mapping of the p-type dopant in an n-type silicon substrate was studied on a planar structure composed of variously sized doped patterns of various dopant densities. The traditional imaging by means of secondary electrons and its quantifiability was verified and the method was extended to the very low energy range.
    Trvalý link: http://hdl.handle.net/11104/0192000