Počet záznamů: 1

Mapping of dopants by electron injection

  1. 1.
    0350658 - UPT-D 2011 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
    Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk
    Mapping of dopants by electron injection.
    Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 15-16. ISBN 978-80-254-6842-5.
    [International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
    Grant CEP: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: silicon structures * secondary electron emission * very low energy range * mapping dopants
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

    Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
    Trvalý link: http://hdl.handle.net/11104/0190598