Počet záznamů: 1

High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon

  1. 1.
    0347839 - FZU-D 2011 RIV DE eng J - Článek v odborném periodiku
    Bronsveld, P.C.P. - Mates, Tomáš - Fejfar, Antonín - Kočka, Jan - Rath, J.K. - Schropp, R.E.I.
    High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon.
    Physica Status Solidi. A. Roč. 207, č. 3 (2010), s. 525-529 ISSN 1862-6300
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: hydrogenated amorphous silicon * columnar growth * cross-sectional transmission electron microscope (X-TEM]
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.458, rok: 2010
    http://dx.doi.org/10.1002/pssa.200982847

    Columnar growth was observed in the amorphous part of mixed phase layers deposited at very low substrate temperatures. The width of the columns and the layer thickness at which they are first distinguishable in a cross-sectional transmission electron microscope (X-TEM) image, about 120 nm, is similar for the substrate temperature range of 40–100 °C, but the columns are less well developed when either the substrate temperature is increased or the dilution ratio is lowered. This growth behaviour and the incubation layer are attributed to hydrogen-induced surface diffusion of growth precursors resulting in an amorphous–amorphous roughness transition.
    Trvalý link: http://hdl.handle.net/11104/0188523