Počet záznamů: 1

Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films

  1. 1.
    0347762 - FZU-D 2011 RIV DE eng J - Článek v odborném periodiku
    Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Rezek, Bohuslav - Stuchlík, Jiří - Kočka, Jan
    Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films.
    Physica Status Solidi C: Current Topics in Solid State Physics. Roč. 7, 3-4 (2010), s. 728-731 ISSN 1862-6351
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: local anodic oxidation (LAO) * conductive atomic force microscopy (C-AFM)
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    http://www3.interscience.wiley.com/journal/123289759/abstract

    We show that local currents observed by the Conductive Atomic Force Microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of Local Anodic Oxidation (LAO), as evidenced by observed topographic changes of Si surface. The tip-induced LAO changes the character of the local current maps in repeated scans or even in the first scan of a pristine surface. In particular, the oxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings. Finally, we have used brief HF acid etch to strip the oxide in order to restore the contrast in the C-AFM maps of aged samples and we compare the observed local current levels to those observed in ultra-high vacuum C-AFM on in-situ deposited samples.
    Trvalý link: http://hdl.handle.net/11104/0188465