Počet záznamů: 1

Raman scattering in silicon disordered by gold ion implantation

  1. 1.
    0346873 - UJF-V 2011 RIV DE eng J - Článek v odborném periodiku
    Lavrentiev, Vasyl - Vacík, Jiří - Vorlíček, Vladimír - Voseček, Václav
    Raman scattering in silicon disordered by gold ion implantation.
    Physica Status Solidi B-Basic Solid State Physics. Roč. 247, č. 8 (2010), s. 2022-2026 ISSN 0370-1972.
    [8th International Conference on Optics of Surfaces and Interfaces (OSI-VIII). Ischia, 07.09.2009-11.09.2009]
    Grant CEP: GA AV ČR IAA200480702; GA AV ČR IAA400100701; GA AV ČR(CZ) KAN400480701; GA ČR GA106/09/1264
    Výzkumný záměr: CEZ:AV0Z10480505; CEZ:AV0Z10100520
    Klíčová slova: ion implantation * Raman spectra * Rutherford backscattering spectroscopy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.344, rok: 2010

    Si (111) covered by a 250-nm thick SiO2 surface layer has been disordered through implantation of 3.035 MeV gold ions within broad range of fluences from 1 x 10(13) ions/cm(2) to 1 x 10(16) ions/cm(2). Raman spectroscopy (514.5 nm laser) was applied for characterization of the silicon disordering. Variation of the Raman spectra of silicon after low-fluence implantation (fluences lower than 5 x 10(14) ions/cm(2)) in the vicinity of the transverse optical phonon (1TO) peak reflects the coexistence of bulk Si crystals (c-Si) and Si nanocrystals (nc-Si) in the implanted layer. Implantation with higher fluences yields only the stable 470 cm(-1) 1TO peak, corresponding to formation of amorphous phase (a-Si), in this region of the spectra. Detailed analysis of the silicon disorder was performed through calculation of the transverse acoustical phonon (1TA) peak area.
    Trvalý link: http://hdl.handle.net/11104/0187786