Počet záznamů: 1

Giant inelastic tunneling in epitaxial graphene mediated by localized states

  1. 1.
    0343359 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Červenka, Jiří - van der Ruit, K. - Flipse, C.F.J.
    Giant inelastic tunneling in epitaxial graphene mediated by localized states.
    Physical Review. B. Roč. 81, č. 20 (2010), 205403/1-205403/5 ISSN 1098-0121
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: graphene * silicon carbide * scanning tunneling microscopy * inelastic electron tunneling spectroscopy * phonons
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.772, rok: 2010

    Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.
    Trvalý link: http://hdl.handle.net/11104/0185858